Apparatus and method for holding and planarizing thin workpieces

ABSTRACT

An apparatus and method for holding a thin workpiece such as a semiconductor wafer for operations which require the workpiece to have a high degree of planarity such as photolithographic printing includes positioning the workpiece onto a planar holding face comprising the points of a multiplicity of regularly spaced-apart substantially parallel pins with a thin rim encompassing all pins to contain a vacuum in the region adjacent to the workpiece. The small abutting area of each pinpoint abutment reduces the probability of dirt particles collecting on the holding face and provides a high thrust pressure to dislodge dirt particles interposed between the abutment and the workpiece. A small amount of lateral motion is imparted to the workpiece when it first contacts the holding face to brush off any dirt particles on the abutments.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part of our copending application,Ser. No. 871,477, filed Jan. 23, 1978, now abandoned.

BACKGROUND OF THE INVENTION

This invention relates to apparatus and method for holding andplanarizing thin workpieces, and more specifically to vacuum apparatusfor holding semiconductor wafers during pattern exposure inphotolithography.

The invention also relates to a method for fabricating devices on asemiconductive wafer by utilizing such an apparatus.

Recent advances in large scale integration (LSI) of semiconductorcircuits have been made possible largely by higher resolutionphotolithography which permits finer features to be patterned onto asemiconductor surface. Consequently circuit components can be madesmaller, thus making it possible to place an increasing number ofcomponents onto a single semiconductor chip. The results are circuits ofgreater complexity, higher speed, lower power dissipation and lowercost.

As a practical matter, the feature size limitations in photolithographyare not usually imposed by the resolution capabilities of the opticalcomponents nor by that of the photoresist, but rather by the flatness orplanarity of the semiconductor surface being patterned. The consequenceof nonplanarity is distortion of the pattern being exposed and an errorin the focal position. Surface planarity is particularly important whenprojection printing is used where, to achieve the maximum resolutioncapability of the projection optics, the semiconductor surface beingexposed must be made essentially coincident with the focal plane of theprojection optics. Deviations of the surface from the focal plane mustnot exceed the depth of focus of the optical system. For example, if thetotal depth of focus were 10 microns, then to achieve maximumresolution, the semiconductor surface including a photoresist filmapproximately one micron thick must be maintained planar to within 10mircons during pattern exposure. A high degree of surface planarity isalso required to achieve freedom from pattern distortion in contactprinting and maximum pattern resolution in proximity printing althoughthe requirement is not as critical as for projection printing.

Nonplanarity in semiconductor wafers may be separated into two sources.The first is that of nonlinear thickness variations in the wafer.Normally during pattern exposure, one surface of the wafer (backsurface) is forced to substantially conform to a planar surface by somewafer holding apparatus. Thus, the other surface of the wafer (frontsurface) would be planar if the wafer had no nonlinear thicknessvariation. Notice that if the wafer had a linear thickness variation(e.g. a wedge shape), its front surface would still be planar althoughit would not be parallel with the back surface. This can be tolerated bymost projection and proximity printing systems which have means fortilting the wafer surface to make it parallel to the optical plane ofthe printing system. But, if the wafer had a nonlinear thicknessvariation, its front surface would be nonplanar. However, nonlinearthickness variations can be reduced to an acceptable degree by carefulwafer fabrication.

The second source of nonplanarity in semiconductor wafers is that ofwarpage. Owing to the thinness of semiconductor wafers used forintergrated circuit processing, some warpage is always present. Atypical three inch diameter silicon wafer which has a thickness offifteen to twenty thousandths of an inch may exhibit a warpage of asmuch as two thousandths of an inch or approximately fifty microns.Warpage is first introduced when the wafer is sawed from the boule.Because the thin wafer is rather springy, the warpage is not removed bythe subsequent lapping and polishing steps in the wafer fabricationprocess. Furthermore, the furnace sequences and the growth anddeposition of various films on the wafer surface during the devicefabrication process may all aggravate the warpage.

The usual method for removing wafer warpage during pattern exposure isto hold the wafer on a vacuum holding apparatus with a highly planarholding face. Thus, if the wafer warpage where not too severe, (lessthan fifty microns), and if the wafer had minimal nonlinear thicknessvariation, the vacuum holding apparatus would in principle cause thefront surface to have a high order of planarity.

However, a problem arises when dirt particles become interposed betweenthe wafer and the holding face to prevent intimate contact. Since thesize of dirt particles may be ten microns in diameter or greater, theireffect is to cause the wafer front surface to deviate sufficiently fromplanarity to produce pattern distortion during photolithographicexposure. The problem of dirt particles is especially difficult to solvein a manufacturing environment where the necessity to maintain a highthroughput of wafers through each photolithographic step renders anycleaning procedure to remove dirt particles from the wafer and the waferholder impractical. Moreover, removal of particulates from the air as inan "ultra-clean room" environment does not completely solve the problemas most of the dirt particles come from the wafers themselves in theform of chips from the wafer edges and flakes from films grown ordeposited on the wafer surface. A broken wafer causes the most severecontamination of particles.

Vacuum fixtures for holding thin workpieces are disclosed in U.S. Pat.Nos. 3,627,338, and 3,747,282. Both patents disclose vacuum chucks wherethe workpiece holding face comprises a planar surface with annular andradial grooves for distributing vacuum to the back surface of theworkpiece. Furthermore, these known fixtures were apparently devised forapplications in machining and polishing of thin workpieces where therequirements for workpiece planarity is not as critical as forphotolithography. Therefore, none of the above-mentioned disclosuresoffers any solutions to the problems arising from the wafer planarityrequirements imposed by photolithography and the detrimental effects ofdirt particles on achieving that planarity.

From the foregoing, a need clearly exists for a vacuum wafer holdingapparatus and wafer planarization method which is substantially immuneto dirt particles which are always present in a semiconductor devicemanufacturing environment.

SUMMARY OF THE INVENTION

Accordingly, one object of the present invention is to provide a vacuumwafer holding apparatus and wafer planarization method which would meetthe aforedescribed need.

Another object of the present invention is to provide a vacuum waferholding apparatus and wafer planarization method which would improve theactual resolution capabilities of a photolithographic system in amanufacturing environment.

Still another object of the present invention is to provide a vacuumwafer holding apparatus and a fabrication method which would improve themanufacturing yield of LSI integrated circuits.

These and other objectives will become apparent from the followingdescription of the preferred embodiment of the invention which is of avacuum holding apparatus having a planar holding face comprising thepoints of a plurality of regularly spaced-apart substantially equalheight pins mounted perpendicularly in a circular baseplate. Thebaseplate has a thin raised rim of the same height as the pins. The edgeof the rim has a smooth planar surface which forms part of the holdingface. The workpiece is positioned over the holding face with its edgesoverlapping the rim. The rim edge forms a substantially airtight sealagainst the workpiece creating an evacuable chamber enclosed by thebaseplate, the rim, and the workpiece. The chamber is evacuated throughan opening in the baseplate, the vacuum creating a pressure differencebetween the front and back workpiece surfaces giving rise to a net forceuniformly distributed along the front surface which causes the workpieceto conform to the holding face. The pinpoint abutments of the holdingface exert counterbalancing localized forces against the back surface tohold the workpiece in place. Owing to the small area of each pinpointabutment, it is highly improbable that a dirt particle would collect onit. The few dirt particles that do collect on the pinpoints wouldnormally be brushed off by any slight lateral motion of the wafer whenit is positioned on the holding face. The extent of this lateral motionwould determine the largest dimension which an abutment may have andstill insure that a dirt particle situated on the abutment will bebrushed off. It has been found that in a manufacturing environment, theminimum lateral motion of a wafer being positioned over a holding faceis about fifty thousandths of an inch. Furthermore, the small area ofthe pinpoints would also tend to squeeze out any dirt particles whichremain after the wafer is in place. .Iadd.

Another aspect of the present invention is a method of improving theplanarity of a substrate wafer during photolithography by makingadvantageous use of the lateral motion which is normally imparted to thewafer as it is loaded onto a holding face to prevent dirt particles frombecoming interposed between the wafer and the holding face. Bysupporting the wafer with a holding face comprising a multiplicity ofpinpoint abutments each having a maximum dimension which is less thanthe extent of the lateral motion of the wafer, dirt particles on theholding face are brushed off when the wafer is loaded.

BRIEF DESCRIPTION OF THE DRAWING

The invention will be better understood from the more detaileddescription taken in conjunction with the accompanying drawing in which:

FIG. 1 is a schematic representation of a vacuum holding apparatus inaccordance with the preferred embodiment of the invention;

FIG. 2 is a top view of the embodiment of FIG. 1;

FIG. 3 is a view taken along lines 4--4 of FIG. 2; and

FIG. 4 depicts a wafer being manually loaded onto a wafer holdingapparatus.

DETAILED DESCRIPTION

Referring now to FIGS. 1, 2 and 3, there is shown a schematic of thepreferred embodiment of the invention comprising a generally circularbaseplate 10 having a raised rim 11. The rim includes a press-fittedinsert 12 to provide a narrow edge 13 which has a smooth top planarsurface for supporting the periphery of the back surface of a thinworkpiece such as a semiconductor wafer 14 having a resist layer, 19,coated thereon, the diameter of the rim being smaller than that of theworkpiece to allow the workpiece edge to overhang the rim. In a typicalembodiment intended to hold 3 inch diameter wafers, the outside diameterof the rim is 2.86 inches. The rim edge makes a substantially airtightseal with the back surface of the workpiece thereby forming an evacuablechamber 15. The chamber communicates with a vacuum pump through a vacuumpassage 16 in the baseplate. Mounted in the baseplate and substantiallyperpendicular thereto are a plurality of regularly spaced-apart rigidcylindrical pins 17 with tapered points 18. The pinpoints together wtihthe rim edge form the holding face against which the back surface of theworkpiece is held when the chamber 15 is evacuated.

The pinpoints provide localized abutments whose areas can be made muchsmaller than that of the distributed abutments in prior art vacuumchucks which comprise annular strips of "land" between vacuumdistributing grooves on the holding face of the chuck.

The heights of the pins 17 and the rim 11 must all be substantially thesame to give the holding face a high degree of planarity. In thepreferred embodiment the planarity is achieved by lapping the entireholding face after its construction. Thus, the holding face is madeplanar to a fraction of a micron over a circular region approximatelythree inches in diameter.

Since one principle of the invention is to decrease the probability ofdirt particles collecting on the holding face by reducing its area, theholding face should be composed of as few pinpoints as possible.However, the pinpoints must not be spaced so far apart to allow theunsupported regions of the workpiece to distort under the force createdby the vacuum, as that would defeat the main objective of the inventionto maintain workpiece surfaces at a high degree of planarity. Theoptimal spacing between adjacent pinpoints depends on the thickness ofthe workpiece and the mechanical characteristics of the workpiecematerial. This spacing can be readily calculated by a person skilled inthe art. An example of how such a calculation is made can be found inAdvance Strength of Materials, J. P. DenHartog, published in 1952 byMcGrawHill Book Co. (see page 128). In a specific illustrativeembodiment intended for holding silicon wafers three inches in diameterand twenty thousandths of an inch thick, the spacing between adjacentpinpoints in the holding face is two-tenths of an inch. The diameters ofsemiconductor wafers used in device fabrication may vary, and in generalthe wafer thickness increases with increasing wafer diameter. Inaccordance with the principles of the invention, apparatus can bedesigned to hold wafers of any diameter.

Another principle of the invention is to reduce the area of eachindividual abutment in the holding face and thereby increase theprobability that a dirt particle would be brushed off during theworkpiece loading operation and that the thrust of the small localizedabutment would squeeze out a dirt particle which becomes interposedbetween the abutment and the workpiece. In practice the smallness of theabutting area depends on the abutment material, the fabrication methodfor the pins, the method used to planarize the holding face and the rateof abrasion of the abutment used. In the preferred embodiment which hasalumina pins with ground points, and in which the holding face isplanarized by lapping, the pinpoints have diameters between ten andfifteen thousandths of an inch. Therefore, the area of each abutment inthe preferred embodiment is in the range of approximately 8.0×10⁻⁵ to1.8×10⁻⁴ square inches. As a practical matter, a holding face which isplanarized by lapping will have abutments with minimum dimensionsexceeding five thousandths of an inch (i.e., a minimum abutting area ofapproximately 2.0×10⁻⁵ square inches). In the same embodiment, the riminsert 13 which is, for example, made of hardended steel has an edgewhich is twenty thousandths of an inch wide.

Still another principle of the invention is that when the wafer isloaded onto the holding face either manually with tweezers or withautomatic wafer loading apparatus, some lateral motion is alwaysimparted to the wafer even after the wafer contacts the holding face asillustrated by FIG. 4. This lateral motion is used advantageously in theinstant invention to "brush" dirt particles off the pinpoints byensuring that the diameter of each pinpoint abutment (or the maximumdimension in the case of pinpoints having noncircular shapes) is lessthan the extent of the lateral motion of the wafer. In the preferredembodiment which is to be used in conjunction with automatic waferloading apparatus which provides a minimum lateral "scrubbing" motion ofat least fifty thousandths of an inch, the diameters of the pinpointsused were, accordingly, made smaller than fifty thousandths of an inch(i.e., the area of each abutment was made less than 2.0×10⁻³ squareinches).

Also shown in FIG. 4 is a representation of a conventional patternexposure apparatus 20 by means of which a high-resolution pattern can beexposed in the layer 19.

Although the particular illustrative embodiment described comprisesapparatus for holding circular semiconductor wafers duringphotolithographic exposure, the invention can also be applied toapparatus for holding other types of thin workpieces with various shapesduring other operations such as polishing, grinding and machining. It isto be understood that the terms "abutment" and "pinpoint abutments" asused in the specification and in the claims, includes any localizedarbitrary shape having small area in addition to the circular shapeshown in the drawing. Moreover, it is to be understood that the term"pins" as used in the specification and claims include column-likemembers of any cross-sectional shape and of any height, and representjust one of many possible structures for supporting small area localizedabutments. Various other modifications may also be made by those skilledin the art without departing from the spirit and scope of thisinvention. Whichever particular apparatus is selected, it is apparentthat the utilization of such an apparatus made in accordance with theprinciples of the present invention makes possible a method thatimproves the yield realized in fabricating microminiature devices.

I claim:
 1. A vacuum apparatus for holding and planarizing a thinworkpiece on a holding face which minimizes the interposition of dirtparticles between said workpiece and said holding face, said apparatuscomprising:(a) a baseplate having a rigid raised rim which includes asmooth planar edge surface adapted to support a workpiece having frontand back surfaces, said edge surface being adapted to contact theperiphery of said back surface to make a substantially airtight sealthereto, thus forming an evacuable chamber enclosed by said baseplate,said rim, and said back surface; (b) a plurality of .[.regularly.].spaced-apart rigid support members disposed within said chamber, eachproviding a localized pinpoint abutment with said back surface, saidabutments together with said edge surface forming a holding face whichis substantially planar, each of said abutments having an areasufficiently small to reduce the probability of dirt particlescollecting thereon, evacuation of said chamber producing a pressuredifference between said front and back workpiece surfaces forcing saidback surface to conform to said holding face, the spacing betweenadjacent ones of said abutments and the spacing between said abutmentsnearest said rim and said edge-surface being sufficiently small toprevent significant distortion of the unsupported regions of saidworkpiece.
 2. An apparatus as in claim 1 wherein the area of each ofsaid abutments is in the range of 2.0×10⁻⁵ to 2.0×10⁻³ square inches. 3.An apparatus according to claim 2 wherein said support members comprisesubstantially parallel pins mounted in said baseplate and wherein saidabutments comprise the points of said pins.
 4. An apparatus according toclaim 3 wherein said baseplate is made from aluminum, said rim is madefrom steel, and said pins are made from alumina.
 5. In the fabricationof semiconductive devices, a method for positioning and planarizing asubstrate wafer having a front and a back surface, said methodcomprising the steps of:loosely positioning said wafer in a generalposition; applying substantially uniformly distributed forces along saidfront surface; applying a multiplicity of localized forces along saidback surface, said back surface forces counterbalancing said frontsurface forces and being sufficient to planarize said wafer; applyingeach of said localized forces to an area of said back surface which areais in the range of 2×10⁻⁵ to 2×10⁻³ square inches; initially moving saidwafer in a direction transverse to that of said localized forces so asto dislodge any dirt particles in contact with said back surface.
 6. Inthe fabrication of semiconductive devices, a method for positioning andplanarizing during pattern exposure a substrate wafer having a frontsurface and a back surface, comprising the steps of:loading said waferonto a wafer holding face with wafer loading means, said back surface ofsaid wafer contacting said holding face, .Iadd.said loading.Iaddend.providing lateral motion to said wafer .[.with said loadingmeans.]. when said back surface initially contacts said holding face,supporting said back surface of said wafer with a multiplicity of.[.regularly.]. spaced apart rigid pinpoint abutments comprising saidholding face, said abutments providing a multiplicity of localizedsupport regions all lying in one plane, each of said support regionshaving a maximum dimension which is less than the extent of said lateralmotion of said wafer whereby dirt particles situated on said abutmentsare brushed off said abutments when said wafer is loaded onto saidholding face, while said wafer is so supported, evacuating a regionadjacent to said back surface to create a force to hold said waferagainst said holding face in a manner that ensures that said frontsurface exhibits a high degree of planarity, and while said wafer is sopositioned and planarized, exposing a high resolution pattern onto saidfront surface of said wafer.